Dr.-Ing. Friedhard Römer

Department Elektrotechnik-Elektronik-Informationstechnik (EEI)
Lehrstuhl für Optoelektronik

Raum 01.021
Konrad-Zuse-Strasse 3/5
91052 Erlangen
Deutschland

Cardinali G., Kölle S., Schulz A., Susilo N., Hauer Vidal D., Guttmann M., Blonski MA., Römer F., Witzigmann B., Nippert F., Wagner MR., Wernicke T., Kneissl M.:
Gain Characteristics of Optically Pumped UVC Lasers with Wide AlGaN Single-Quantum-Well Active Regions
In: physica status solidi (a) (2024)
ISSN: 1862-6300
DOI: 10.1002/pssa.202400067
Faber S., Römer F., Witzigmann B.:
Simulation Study of Aluminum Nitride TrenchFETs with Polarization-Induced Doping
In: physica status solidi (a) (2024)
ISSN: 1862-6300
DOI: 10.1002/pssa.202400045
Jeddi H., Adham K., Zhao Y., Witzigmann B., Römer F., Bermeo M., Borgström MT., Pettersson H.:
Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contacts
In: Nanotechnology 35 (2024), Art.Nr.: 215206
ISSN: 0957-4484
DOI: 10.1088/1361-6528/ad2bd0
Kölle S., Römer F., Cardinali G., Schulz A., Susilo N., Hauer Vidal D., Wernicke T., Kneissl M., Witzigmann B.:
Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States
In: IEEE Photonics Journal 16 (2024), S. 1-5
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2024.3379231
Römer F., Hofmann G., Hoopfner J., Schilling M., Muhin A., Wernicke T., Kneissl M., Witzigmann B.:
Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode
In: IEEE Photonics Journal (2024), S. 1-6
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2024.3351965

Römer F., Hofmann G., Höpfner J., Schilling M., Muhin A., Wernicke T., Kneissl M., Witzigmann B.:
Effect of the Hole Mobility on the Emission Spectrum of a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode
23rd International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023 (Turin, ITA, 18. September 2023 - 21. September 2023)
In: Paolo Bardella, Alberto Tibaldi (Hrsg.): Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023
DOI: 10.1109/NUSOD59562.2023.10273498
Witzigmann B., Römer F.:
Polarization induced doping for carrier transport in graded III-nitride layers: a simulation study
Physics and Simulation of Optoelectronic Devices XXXI 2023 (San Francisco, CA, USA, 31. Januar 2023 - 2. Februar 2023)
In: Bernd Witzigmann, Marek Osinski, Yasuhiko Arakawa (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2023
DOI: 10.1117/12.2652797

Chavarin CA., Hardt E., Skibitzki O., Voss T., Eissa M., Spirito D., Capellini G., Baldassarre L., Flesch J., Piehler J., You C., Gruessing S., Römer F., Witzigmann B.:
Terahertz subwavelength sensing with bio-functionalized germanium fano-resonators
In: Frequenz (2022)
ISSN: 0016-1136
DOI: 10.1515/freq-2022-0078

Römer F., Guttmann M., Wernicke T., Kneissl M., Witzigmann B.:
Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes
In: Materials 14 (2021)
ISSN: 1996-1944
DOI: 10.3390/ma14247890

Römer F., Witzigmann B.:
Luminescence distribution in the multi-quantum well region of III-nitride light emitting diodes
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI 2017
DOI: 10.1117/12.2253668

Römer F., Witzigmann B., Deppner M., Range C.:
Auger recombination and leakage in InGaN/GaN quantum well LEDs
Gallium Nitride Materials and Devices IX (San Francisco, CA)
DOI: 10.1117/12.2037043

Römer F., Witzigmann B.:
Computational modelling of surface effects in InGaN/GaN quantum disk nano wire LEDs
Physics and Simulation of Optoelectronic Devices XXI (San Francisco, CA)
DOI: 10.1117/12.2006182