M.Sc. Samuel Faber

2024

• Faber S., Römer F., Witzigmann B.:
  Simulation Study of Aluminum Nitride TrenchFETs with Polarization-Induced Doping
  In: physica status solidi (a) (2024)
  ISSN: 1862-6300
  DOI: 10.1002/pssa.202400045

2023

• Faber S., Kohlhepp B., Dobusch J., Kaiser J., Dürbaum T.:
  In-Depth Study of the Parasitic Capacitances of a Half-bridge Circuit
  25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) (Aalborg, Denmark, 4. September 2023 - 8. September 2023)
  DOI: 10.23919/EPE23ECCEEurope58414.2023.10264660
• Kohlhepp B., Faber S., Kübrich D., Dürbaum T.:
  PCB Layout Parasitics Extraction of a GaN Half-Bridge: Simulation and Experimental Validation
  25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) (Aalborg, Denmark, 4. September 2023 - 8. September 2023)
  DOI: 10.23919/EPE23ECCEEurope58414.2023.10264516

2022

• Kohlhepp B., Faber S., Kaiser J., Dürbaum T.:
  Study on Commutation Loop Inductance and Current Distribution to DC-link Capacitors in a GaN Half-bridge
  24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe (Hannover, 5. September 2022 - 9. September 2022)
  In: 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe 2022
• Kohlhepp B., Faber S., Kaiser J., Kübrich D., Dürbaum T.:
  Extraction of Parasitic Elements of a Printed Circuit Board applied to a GaN Half-Bridge
  International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2022 (Nuremberg, DEU, 10. Mai 2022 - 12. Mai 2022)
  In: PCIM Europe Conference Proceedings 2022
  DOI: 10.30420/565822168